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"Optimization of HfSiON using a design of experiment (DOE) approach on 0.45 ..."

A. Rothschild et al. (2007)

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DOI: 10.1016/J.MICROREL.2007.01.042

access: closed

type: Journal Article

metadata version: 2024-03-13

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A. Rothschild, R. Mitsuhashi, Christoph Kerner, X. Shi, J. L. Everaert, L. Date, Thierry Conard, Olivier Richard, C. Vrancken, R. Verbeeck, Anabela Veloso, A. Lauwers, Muriel de Potter de ten Broeck, I. Debusschere, M. Jurczak, M. Niwa, Philippe Absil, S. Biesemans:
Optimization of HfSiON using a design of experiment (DOE) approach on 0.45 V V_t Ni-FUSI CMOS transistors. Microelectron. Reliab. 47(4-5): 521-524 (2007)

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