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"Variability model for forming process in oxygen vacancy modulated ..."

Nagarajan Raghavan et al. (2014)

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DOI: 10.1016/J.MICROREL.2014.07.118

access: closed

type: Journal Article

metadata version: 2023-03-21

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Nagarajan Raghavan, Michel Bosman, Daniel D. Frey, Kin Leong Pey:
Variability model for forming process in oxygen vacancy modulated high-κ based resistive switching memory devices. Microelectron. Reliab. 54(9-10): 2266-2271 (2014)

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