Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"Analysis of the gate current as a suitable indicator for FET degradation ..."

Antonio Raffo et al. (2011)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2010.08.010

access: closed

type: Journal Article

metadata version: 2020-10-26

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/RaffoFSMSV11
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/RaffoFSMSV11
Antonio Raffo, Sergio Di Falco, Giovanna Sozzi, Roberto Menozzi, Dominique M. M.-P. Schreurs, Giorgio Vannini:
Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime. Microelectron. Reliab. 51(2): 235-239 (2011)

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.