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"Mechanism of anomalous recovery in advanced SiGe bipolar transistors after ..."

V. S. Pershenkov et al. (2014)

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DOI: 10.1016/J.MICROREL.2014.04.009

access: closed

type: Journal Article

metadata version: 2021-09-20

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V. S. Pershenkov, Miguel Ullán, M. Wilder, H. Spieler, E. Spencer, S. Rescia, F. M. Newcomer, F. Martinez-McKinney, W. Kononenko, A. A. Grillo, S. Díez:
Mechanism of anomalous recovery in advanced SiGe bipolar transistors after low dose rate irradiation for very high total doses. Microelectron. Reliab. 54(11): 2360-2363 (2014)

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