default search action
"Electrical characteristics of a-IGZO transistors along the in-plane axis ..."
Chang Bum Park et al. (2016)
- Chang Bum Park, HyungIl Na, Soon Sung Yoo, Kwon-Shik Park:
Electrical characteristics of a-IGZO transistors along the in-plane axis during outward bending. Microelectron. Reliab. 59: 37-43 (2016)
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.