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"Threshold voltage shift prediction for gate bias stress on amorphous ..."

Suehye Park, Edward Namkyu Cho, Ilgu Yun (2012)

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DOI: 10.1016/J.MICROREL.2012.07.005

access: closed

type: Journal Article

metadata version: 2020-02-22

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Suehye Park, Edward Namkyu Cho, Ilgu Yun:
Threshold voltage shift prediction for gate bias stress on amorphous InGaZnO thin film transistors. Microelectron. Reliab. 52(9-10): 2215-2219 (2012)

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