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"Impact of strained-channel n-MOSFETs with a SiGe virtual substrate on ..."

G. Néau et al. (2007)

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DOI: 10.1016/J.MICROREL.2007.01.079

access: closed

type: Journal Article

metadata version: 2020-11-03

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G. Néau, Frédéric Martinez, M. Valenza, J. C. Vildeuil, E. Vincent, Frédéric Boeuf, F. Payet, K. Rochereau:
Impact of strained-channel n-MOSFETs with a SiGe virtual substrate on dielectric interface quality evaluated by low frequency noise measurements. Microelectron. Reliab. 47(4-5): 567-572 (2007)

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