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"Weibull characteristics of n-MOSFET's with ultrathin gate oxides under FN ..."

Fuchen Mu et al. (2002)

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DOI: 10.1016/S0026-2714(02)00007-0

access: closed

type: Journal Article

metadata version: 2020-02-22

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Fuchen Mu, Mingzhen Xu, Changhua Tan, Xiaorong Duan:
Weibull characteristics of n-MOSFET's with ultrathin gate oxides under FN stress and lifetime prediction. Microelectron. Reliab. 42(6): 985-989 (2002)

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