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"Modeling of the I-V characteristics of high-field stressed MOS structures ..."

Enrique Miranda, Gabriel Redin, Adrián Faigón (2002)

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DOI: 10.1016/S0026-2714(02)00009-4

access: closed

type: Journal Article

metadata version: 2020-10-26

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Enrique Miranda, Gabriel Redin, Adrián Faigón:
Modeling of the I-V characteristics of high-field stressed MOS structures using a Fowler-Nordheim-type tunneling expression. Microelectron. Reliab. 42(6): 935-941 (2002)

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