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"A thorough investigation of hot-carrier-induced gate oxide breakdown in ..."

Hongxia Liu, Yue Hao, Jiangang Zhu (2002)

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DOI: 10.1016/S0026-2714(02)00070-7

access: closed

type: Journal Article

metadata version: 2020-02-22

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Hongxia Liu, Yue Hao, Jiangang Zhu:
A thorough investigation of hot-carrier-induced gate oxide breakdown in partially depleted N- and P-channel SIMOX MOSFETs. Microelectron. Reliab. 42(7): 1037-1044 (2002)

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