"Source engineering on ruggedness and RF performance of n-channel RFLDMOS."

Hao Li et al. (2018)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2018.06.001

access: closed

type: Journal Article

metadata version: 2020-02-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/LiCLD18
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/LiCLD18
Hao Li, Mifang Cong, Ke Li, Huan Du:
Source engineering on ruggedness and RF performance of n-channel RFLDMOS. Microelectron. Reliab. 87: 57-63 (2018)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.