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"Deep level defects involved in MOS device instabilities."

Patrick M. Lenahan (2007)

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DOI: 10.1016/J.MICROREL.2006.10.016

access: closed

type: Journal Article

metadata version: 2020-02-22

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Patrick M. Lenahan:
Deep level defects involved in MOS device instabilities. Microelectron. Reliab. 47(6): 890-898 (2007)

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