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"Electrical reliability of highly reliable 256M-bit mobile DRAM with ..."

Chihoon Lee et al. (2003)

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DOI: 10.1016/S0026-2714(03)00036-2

access: closed

type: Journal Article

metadata version: 2020-02-22

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Chihoon Lee, Donggun Park, Hyeong Joon Kim, Wonshik Lee:
Electrical reliability of highly reliable 256M-bit mobile DRAM with top-edge round STI and dual gate oxide. Microelectron. Reliab. 43(5): 735-739 (2003)

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