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"Characterisation of emitter/base leakage currents in SiGe HBTs produced ..."

Andrew C. Lamb et al. (2001)

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DOI: 10.1016/S0026-2714(00)00219-5

access: closed

type: Journal Article

metadata version: 2023-05-09

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Andrew C. Lamb, J. F. W. Schiz, J. M. Bonar, Fuccio Cristiano, Peter Ashburn, Stephen Hall, Peter L. F. Hemment:
Characterisation of emitter/base leakage currents in SiGe HBTs produced using selective epitaxy. Microelectron. Reliab. 41(2): 273-279 (2001)

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