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"Gate leakage current in GaN-based mesa- and planar-type heterostructure ..."

Jaroslav Kovác et al. (2012)

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DOI: 10.1016/J.MICROREL.2012.02.003

access: closed

type: Journal Article

metadata version: 2022-10-02

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Jaroslav Kovác, Alexander Satka, Ales Chvála, D. Donoval, Peter Kordos, Sylvain L. Delage:
Gate leakage current in GaN-based mesa- and planar-type heterostructure field-effect transistors. Microelectron. Reliab. 52(7): 1323-1327 (2012)

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