"New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100 nm ..."

Ponky Ivo et al. (2014)

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DOI: 10.1016/J.MICROREL.2014.03.005

access: closed

type: Journal Article

metadata version: 2020-02-22

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Ponky Ivo, Eunjung Melanie Cho, Przemyslaw Kotara, Lars Schellhase, Richard Lossy, Ute Zeimer, Anna Mogilatenko, Joachim Würfl, Günther Tränkle, Arkadiusz Glowacki, Christian Boit:
New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100 nm scale unpassivated regions around the gate periphery. Microelectron. Reliab. 54(6-7): 1288-1292 (2014)

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