"The influence of p-polysilicon gate doping on the dielectric breakdown of ..."

G. Innertsberger, T. Pompl, Martin Kerber (2001)

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DOI: 10.1016/S0026-2714(01)00050-6

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type: Journal Article

metadata version: 2020-10-09

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G. Innertsberger, T. Pompl, Martin Kerber:
The influence of p-polysilicon gate doping on the dielectric breakdown of PMOS devices. Microelectron. Reliab. 41(7): 973-975 (2001)

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