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"Plasma process-induced damage on thick (6.8 nm) and thin (3.5 nm) gate ..."

Terence B. Hook, David Harmon, Chuan Lin (2001)

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DOI: 10.1016/S0026-2714(00)00228-6

access: closed

type: Journal Article

metadata version: 2020-02-22

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Terence B. Hook, David Harmon, Chuan Lin:
Plasma process-induced damage on thick (6.8 nm) and thin (3.5 nm) gate oxide: parametric shifts, hot-carrier response, and dielectric integrity degradation. Microelectron. Reliab. 41(5): 751-765 (2001)

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