"The effect of annealing temperature on the electronic parameters and ..."

Erjuan Guo et al. (2016)

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DOI: 10.1016/J.MICROREL.2016.03.025

access: closed

type: Journal Article

metadata version: 2020-02-22

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Erjuan Guo, Zhigang Zeng, Yan Zhang, Xiao Long, Haijun Zhou, Xiaohong Wang:
The effect of annealing temperature on the electronic parameters and carrier transport mechanism of Pt/n-type Ge Schottky diode. Microelectron. Reliab. 62: 63-69 (2016)

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