Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep ..."

Ignasi Cortés et al. (2005)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2004.08.005

access: closed

type: Journal Article

metadata version: 2021-10-14

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/CortesRFUHR05
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/CortesRFUHR05
Ignasi Cortés, Jaume Roig, David Flores, Jesús Urresti, Salvador Hidalgo, José Rebollo:
Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile. Microelectron. Reliab. 45(3-4): 493-498 (2005)

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.