Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"Gate leakage properties of MOS devices with tri-layer high-k gate dielectric."

W. B. Chen et al. (2007)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2006.06.002

access: closed

type: Journal Article

metadata version: 2023-10-02

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/ChenXLLX07
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/ChenXLLX07
W. B. Chen, Jing-Ping Xu, Pui-To Lai, Y. P. Li, S. G. Xu:
Gate leakage properties of MOS devices with tri-layer high-k gate dielectric. Microelectron. Reliab. 47(6): 937-943 (2007)

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.