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"Improved performance by using TaON/SiO2 as dual tunnel layer in ..."

J. X. Chen et al. (2014)

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DOI: 10.1016/J.MICROREL.2013.10.011

access: closed

type: Journal Article

metadata version: 2023-07-06

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J. X. Chen, Jing-Ping Xu, Lu Liu, X. D. Huang, Pui To Lai:
Improved performance by using TaON/SiO₂ as dual tunnel layer in Charge-Trapping nonvolatile memory. Microelectron. Reliab. 54(2): 393-396 (2014)

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