"Reliability investigation of AlGaN/GaN high electron mobility transistors ..."

Wei-Wei Chen et al. (2014)

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DOI: 10.1016/J.MICROREL.2014.02.005

access: closed

type: Journal Article

metadata version: 2024-06-17

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Wei-Wei Chen, Xiaohua Ma, Bin Hou, Sheng-Lei Zhao, Jiejie Zhu, Jincheng Zhang, Yue Hao:
Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress. Microelectron. Reliab. 54(6-7): 1293-1298 (2014)

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