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"Reliability impacts of high-speed 3-bit/cell Schottky barrier nanowire ..."

Wei Chang et al. (2015)

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DOI: 10.1016/J.MICROREL.2014.09.004

access: closed

type: Journal Article

metadata version: 2020-10-29

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Wei Chang, Chun-Hsing Shih, Yan-Xiang Luo, Wen-Fa Wu, Chen-Hsin Lien:
Reliability impacts of high-speed 3-bit/cell Schottky barrier nanowire charge-trapping memories. Microelectron. Reliab. 55(1): 74-80 (2015)

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