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"Investigation of high voltage SCR-LDMOS ESD device for 150 V SOI BCD process."
Xiaowu Cai et al. (2013)
- Xiaowu Cai, Junxiu Wei, Chao Liang, Zhe Gao
, Chuan Lv:
Investigation of high voltage SCR-LDMOS ESD device for 150 V SOI BCD process. Microelectron. Reliab. 53(6): 861-866 (2013)
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