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"Investigation of high voltage SCR-LDMOS ESD device for 150 V SOI BCD process."

Xiaowu Cai et al. (2013)

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DOI: 10.1016/J.MICROREL.2013.02.007

access: closed

type: Journal Article

metadata version: 2020-02-22

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  - https://dblp.org/rec/journals/mr/CaiWLGL13
Xiaowu Cai, Junxiu Wei, Chao Liang, Zhe Gao, Chuan Lv:
Investigation of high voltage SCR-LDMOS ESD device for 150 V SOI BCD process. Microelectron. Reliab. 53(6): 861-866 (2013)

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