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"2D Dopant Profiling on 4H Silicon Carbide P+N Junction by ..."
Marco Buzzo et al. (2004)
- Marco Buzzo, Markus Leicht, Thomas Schweinböck, Mauro Ciappa, Maria Stangoni, Wolfgang Fichtner:
2D Dopant Profiling on 4H Silicon Carbide P+N Junction by Scanning Capacitance and Scanning Electron Microscopy. Microelectron. Reliab. 44(9-11): 1681-1686 (2004)
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