Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"Study of internal behavior in a vertical DMOS transistor under short high ..."

M. Blaho et al. (2003)

> Home

Details and statistics

DOI: 10.1016/S0026-2714(03)00021-0

access: closed

type: Journal Article

metadata version: 2022-03-16

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/BlahoPGDGS03
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/BlahoPGDGS03
M. Blaho, Dionyz Pogany, Erich Gornik, Marie Denison, Gerhard Groos, Matthias Stecher:
Study of internal behavior in a vertical DMOS transistor under short high current stress by an interferometric mapping method. Microelectron. Reliab. 43(4): 545-548 (2003)

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.