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"Junction leakage current degradation under high temperature reverse-bias ..."

Giacomo Barletta, Giuseppe Currò (2005)

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DOI: 10.1016/J.MICROREL.2004.11.008

access: closed

type: Journal Article

metadata version: 2020-02-22

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Giacomo Barletta, Giuseppe Currò:
Junction leakage current degradation under high temperature reverse-bias stress induced by band-defect-band tunnelling in power VDMOS. Microelectron. Reliab. 45(5-6): 994-999 (2005)

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