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"Evidence for causality between GaN RF HEMT degradation and the ..."

A. R. Arehart et al. (2016)

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DOI: 10.1016/J.MICROREL.2015.11.007

access: closed

type: Journal Article

metadata version: 2020-07-01

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A. R. Arehart, A. Sasikumar, Glen David Via, B. S. Poling, E. R. Heller, S. A. Ringel:
Evidence for causality between GaN RF HEMT degradation and the E_C-0.57 eV trap in GaN. Microelectron. Reliab. 56: 45-48 (2016)

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