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"Numerical investigation of characteristics of p-channel Ge/Si ..."

H. G. Yang et al. (2003)

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DOI: 10.1016/S0026-2692(02)00138-6

access: closed

type: Journal Article

metadata version: 2020-02-22

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  - journals/mj/YangSPGSHZZ03
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  - https://dblp.org/rec/journals/mj/YangSPGSHZZ03
H. G. Yang, Yi Shi, L. Pu, S. L. Gu, B. Shen, P. Han, R. Zhang, Y. D. Zhang:
Numerical investigation of characteristics of p-channel Ge/Si hetero-nanocrystal memory. Microelectron. J. 34(1): 71-75 (2003)

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