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"A 0.35 V, 375 kHz, 5.43 µW, 40 nm, 128 kb, symmetrical 10T ..."

Shang-Lin Wu et al. (2016)

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DOI: 10.1016/J.MEJO.2016.02.011

access: closed

type: Journal Article

metadata version: 2020-02-22

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Shang-Lin Wu, Chien-Yu Lu, Ming-Hsien Tu, Huan-Shun Huang, Kuen-Di Lee, Yung-Shin Kao, Ching-Te Chuang:
A 0.35 V, 375 kHz, 5.43 µW, 40 nm, 128 kb, symmetrical 10T subthreshold SRAM with tri-state bit-line. Microelectron. J. 51: 89-98 (2016)

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