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"A 0.4 V 12T 2RW dual-port SRAM with suppressed common-row-access disturbance."

Bo Wang, Jun Zhou, Tony Tae-Hyoung Kim (2017)

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DOI: 10.1016/J.MEJO.2017.01.003

access: closed

type: Journal Article

metadata version: 2022-04-09

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Bo Wang, Jun Zhou, Tony Tae-Hyoung Kim:
A 0.4 V 12T 2RW dual-port SRAM with suppressed common-row-access disturbance. Microelectron. J. 69: 78-85 (2017)

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