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"Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes."

P. Vigneshwara Raja et al. (2022)

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DOI: 10.1016/J.MEJO.2022.105575

access: closed

type: Journal Article

metadata version: 2022-11-13

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  - https://dblp.org/rec/journals/mj/RajaRSNMPNMFMTI22
P. Vigneshwara Raja, Christophe Raynaud, Camille Sonneville, Atse Julien Eric N'Dohi, Hervé Morel, Luong-Viêt Phung, Thi Huong Ngo, Philippe De Mierry, Éric Frayssinet, Hassan Maher, Josiane Tasselli, Karine Isoird, Frédéric Morancho, Yvon Cordier, Dominique Planson:
Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes. Microelectron. J. 128: 105575 (2022)

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