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"Investigation on effect of AlN barrier thickness and lateral scalability ..."

B. Mounika et al. (2023)

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DOI: 10.1016/J.MEJO.2023.105923

access: closed

type: Journal Article

metadata version: 2023-10-27

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B. Mounika, J. Ajayan, Sandip Bhattacharya, D. Nirmal, V. Bharath Sreenivasulu, N. Aruna Kumari:
Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future RF electronic applications. Microelectron. J. 140: 105923 (2023)

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