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"Novel design and modelling of SiC junction barrier Schottky diode with ..."

Maojiu Luo et al. (2024)

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DOI: 10.1016/J.MEJO.2024.106343

access: closed

type: Journal Article

metadata version: 2024-08-16

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Maojiu Luo, Hang Chen, Yourun Zhang, Yucheng Wang, Rong Zhou, Zhi Wang, Chao Lu, Bo Zhang:
Novel design and modelling of SiC junction barrier Schottky diode with improved Baliga FOM under high-temperature applications. Microelectron. J. 151: 106343 (2024)

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