"Enhanced performance of p-GaN HEMT via partial etched AlGaN."

Qingxin Liu et al. (2025)

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DOI: 10.1016/J.MEJO.2025.106627

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type: Journal Article

metadata version: 2025-04-29

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Qingxin Liu, Shuang Wu, Kailin Ren, Luqiao Yin, Jianhua Zhang:
Enhanced performance of p-GaN HEMT via partial etched AlGaN. Microelectron. J. 159: 106627 (2025)

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