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"9 mV/V ultra-low DIBL of suppressing SCEs in InAlN/GaN HEMT with ..."
Mengxiao Lian et al. (2023)
- Mengxiao Lian, Yian Yin, Jialin Li, Bingzhi Zou, Keming Zhang, Xichen Zhang, Yafang Xie, You Wu, Zhixiang Zhang:
9 mV/V ultra-low DIBL of suppressing SCEs in InAlN/GaN HEMT with lattice-matched InxAlyGa(1-x-y)N back-barrier for RF device. Microelectron. J. 137: 105828 (2023)
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