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"A 20 nm robust single-ended boost-less 7T FinFET sub-threshold SRAM cell ..."

C. B. Kushwah, Santosh Kumar Vishvakarma, Devesh Dwivedi (2016)

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DOI: 10.1016/J.MEJO.2016.02.010

access: closed

type: Journal Article

metadata version: 2020-02-22

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  - https://dblp.org/rec/journals/mj/KushwahVD16
C. B. Kushwah, Santosh Kumar Vishvakarma, Devesh Dwivedi:
A 20 nm robust single-ended boost-less 7T FinFET sub-threshold SRAM cell under process-voltage-temperature variations. Microelectron. J. 51: 75-88 (2016)

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