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"A robust and write bit-line free sub-threshold 12T-SRAM for ultra low ..."

Mehrzad Karamimanesh et al. (2021)

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DOI: 10.1016/J.MEJO.2021.105185

access: closed

type: Journal Article

metadata version: 2022-01-03

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Mehrzad Karamimanesh, Ebrahim Abiri, Kourosh Hassanli, Mohammad Reza Salehi, Abdolreza Darabi:
A robust and write bit-line free sub-threshold 12T-SRAM for ultra low power applications in 14 nm FinFET technology. Microelectron. J. 118: 105185 (2021)

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