"Effect of polarized AlGaN/GaN structure-based field plate on the electric ..."

Feng He et al. (2025)

> Home

Details and statistics

DOI: 10.1016/J.MEJO.2025.106814

access: closed

type: Journal Article

metadata version: 2025-08-19

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mj/HeZHLNJ25
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mj/HeZHLNJ25
Feng He, Wenting Zhang, Xiamin Hao, Xinyu Li, Ruifen Nie, Rui Jin:
Effect of polarized AlGaN/GaN structure-based field plate on the electric properties of a 4H-SiC Schottky barrier diode. Microelectron. J. 164: 106814 (2025)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.