"Band structure anisotropy effects on the hole transport transient in 4H-SiC."

M. Z. S. Flores et al. (2003)

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DOI: 10.1016/S0026-2692(03)00110-1

access: closed

type: Journal Article

metadata version: 2020-09-21

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M. Z. S. Flores, F. F. Maia, V. N. Freire, J. A. P. da Costa, Eronides Felisberto da Silva Júnior:
Band structure anisotropy effects on the hole transport transient in 4H-SiC. Microelectron. J. 34(5-8): 717-719 (2003)

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