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"Split-gate trench metal-oxide-semiconductor field effect transistor with ..."

Dong Fang et al. (2022)

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DOI: 10.1016/J.MEJO.2022.105616

access: closed

type: Journal Article

metadata version: 2023-01-15

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Dong Fang, Guang Yang, Ming Qiao, Kui Xiao, Xiangyu Yang, Zheng Bian, Bo Zhang:
Split-gate trench metal-oxide-semiconductor field effect transistor with an inverted L-shaped source region. Microelectron. J. 130: 105616 (2022)

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