![](https://dblp1.uni-trier.de/img/logo.ua.320x120.png)
![](https://dblp1.uni-trier.de/img/dropdown.dark.16x16.png)
![](https://dblp1.uni-trier.de/img/peace.dark.16x16.png)
Остановите войну!
for scientists:
![search dblp search dblp](https://dblp1.uni-trier.de/img/search.dark.16x16.png)
![search dblp](https://dblp1.uni-trier.de/img/search.dark.16x16.png)
default search action
"GaN nanodot fabrication by implant source growth."
Ryan Buckmaster et al. (2005)
- Ryan Buckmaster, J. H. Yoo, K. Shin, Y. Yao, Takashi Sekiguchi
, M. Yokoyama, Takashi Hanada
, Takenari Goto, M. Cho, Yoshiyuki Kawazoe
:
GaN nanodot fabrication by implant source growth. Microelectron. J. 36(3-6): 456-459 (2005)
![](https://dblp1.uni-trier.de/img/cog.dark.24x24.png)
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.