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"Influence of anisotropic strain on excitonic transitions in a-plane GaN films."

Carsten Buchheim et al. (2009)

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DOI: 10.1016/J.MEJO.2008.07.035

access: closed

type: Journal Article

metadata version: 2021-05-05

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  - journals/mj/BuchheimRGGCWEDWBK09
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  - https://dblp.org/rec/journals/mj/BuchheimRGGCWEDWBK09
Carsten Buchheim, M. Röppischer, Rüdiger Goldhahn, G. Gobsch, Christoph Cobet, Christoph Werner, Norbert Esser, Armin Dadgar, Matthias Wieneke, Jürgen Bläsing, Alois Krost:
Influence of anisotropic strain on excitonic transitions in a-plane GaN films. Microelectron. J. 40(2): 322-324 (2009)

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