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"A study of temperature field in a GaN heterostructure field-effect transistor."

M. A. Baig et al. (2003)

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DOI: 10.1016/S0026-2692(02)00190-8

access: closed

type: Journal Article

metadata version: 2021-02-23

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  - journals/mj/BaigKKKSW03
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  - https://dblp.org/rec/journals/mj/BaigKKKSW03
M. A. Baig, M. Z. H. Khandkar, Jamil A. Khan, M. A. Khan, G. Simin, H. Wang:
A study of temperature field in a GaN heterostructure field-effect transistor. Microelectron. J. 34(3): 207-214 (2003)

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