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"Nanosheet field effect transistors-A next generation device to keep ..."

J. Ajayan et al. (2021)

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DOI: 10.1016/J.MEJO.2021.105141

access: closed

type: Journal Article

metadata version: 2021-10-14

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J. Ajayan, D. Nirmal, Shubham Tayal, Sandip Bhattacharya, L. Arivazhagan, A. S. Augustine Fletcher, P. Murugapandiyan, D. Ajitha:
Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study. Microelectron. J. 114: 105141 (2021)

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