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"On the design of the channel region in 4H-SiC JBS diode through an ..."

Luigi Di Benedetto, Gian Domenico Licciardo, Alfredo Rubino (2021)

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DOI: 10.1016/J.MATCOM.2020.07.008

access: closed

type: Journal Article

metadata version: 2023-03-21

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Luigi Di Benedetto, Gian Domenico Licciardo, Alfredo Rubino:
On the design of the channel region in 4H-SiC JBS diode through an analytical model of the potential barrier. Math. Comput. Simul. 183: 198-207 (2021)

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