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"A 30% Efficient High-Output Voltage Fully Integrated Self-Biased Gate RF ..."

Ziyue Xu et al. (2022)

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DOI: 10.1109/JSSC.2022.3180633

access: closed

type: Journal Article

metadata version: 2022-12-07

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Ziyue Xu, Adam Khalifa, Ankit Mittal, Mehdi Nasrollahpourmotlaghzanjani, Diptashree Das, Marvin Onabajo, Nian Xiang Sun, Sydney S. Cash, Aatmesh Shrivastava:
A 30% Efficient High-Output Voltage Fully Integrated Self-Biased Gate RF Rectifier Topology for Neural Implants. IEEE J. Solid State Circuits 57(11): 3324-3335 (2022)

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