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"An 0.8-μm high-voltage IC using a newly designed 600-V lateral ..."

Kiyoto Watabe et al. (1998)

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DOI: 10.1109/4.711342

access: closed

type: Journal Article

metadata version: 2022-07-06

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Kiyoto Watabe, Hajime Akiyama, Tomohide Terashima, Masakazu Okada, Shinji Nobuto, Masao Yamawaki, Sotoju Asa:
An 0.8-μm high-voltage IC using a newly designed 600-V lateral p-channel dual-action device on SOI. IEEE J. Solid State Circuits 33(9): 1423-1427 (1998)

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