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"A 31 ns Random Cycle VCAT-Based 4F 2 DRAM With ..."

Ki-Whan Song et al. (2010)

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DOI: 10.1109/JSSC.2010.2040229

access: closed

type: Journal Article

metadata version: 2020-08-30

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  - journals/jssc/SongKYKKCKKPKTPKLOJYPOKJ10
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  - https://dblp.org/rec/journals/jssc/SongKYKKCKKPKTPKLOJYPOKJ10
Ki-Whan Song, Jinyoung Kim, Jae-Man Yoon, Sua Kim, Huijung Kim, Hyun-Woo Chung, Hyungi Kim, Kanguk Kim, Hwan-Wook Park, Hyun Chul Kang, Nam-Kyun Tak, Dukha Park, Woo-Seop Kim, Yeong-Taek Lee, Yong Chul Oh, Gyo-Young Jin, Jei-Hwan Yoo, Donggun Park, Kyungseok Oh, Changhyun Kim, Young-Hyun Jun:
A 31 ns Random Cycle VCAT-Based 4F ² DRAM With Manufacturability and Enhanced Cell Efficiency. IEEE J. Solid State Circuits 45(4): 880-888 (2010)

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